Kaohsiung, Taiwan

Wan-Huei Lu

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Semiconductor Engineering, Inc.. Active years: 2008.


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Innovations by Wan-Huei Lu in Semiconductor Technology

Introduction

Wan-Huei Lu is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of bump structures used in electronic devices. His innovative work has led to the development of a patented method that enhances the stability and reliability of semiconductor components.

Latest Patents

Wan-Huei Lu holds a patent titled "Structure of bumps forming on an under metallurgy layer and method for making the same." This patent describes a structure that includes a wafer, an under bump metallurgy (UBM) layer, a second photo resist, and a bump. The design ensures that the UBM layer does not react with the bump during the reflow process, thereby avoiding stress concentration and enhancing the stability of the bump. This innovation is crucial for improving the performance and longevity of semiconductor devices.

Career Highlights

Wan-Huei Lu is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to work on cutting-edge semiconductor technologies. His expertise in the field has made him a valuable asset to the company and the industry as a whole.

Collaborations

He has collaborated with Chi-Long Tsai, contributing to advancements in semiconductor manufacturing processes. Their joint efforts have focused on improving the efficiency and effectiveness of semiconductor production.

Conclusion

Wan-Huei Lu's contributions to semiconductor technology through his innovative patent demonstrate his commitment to enhancing electronic device performance. His work continues to influence the industry positively, paving the way for future advancements.

Profile summary based on public USPTO records.
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