Covina, CA, United States of America

Walter Richard Buerger, Jr

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Other. Active years: 2006-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Walter Richard Buerger, Jr. Retrieved from https://idiyas.com/inventor/walter-richard-buerger-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal2 out of 834,601 
Other
 patents

Years Active: 2006-2008

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2 patents (USPTO):Explore Patents

Title: Walter Richard Buerger, Jr.: Innovator in Microelectronic Components

Introduction

Walter Richard Buerger, Jr. is a notable inventor based in Covina, CA (US). He has made significant contributions to the field of microelectronics, particularly in the development of advanced static random access memory (SRAM) cell structures. With a total of 2 patents, Buerger's work showcases innovative methods of fabrication that enhance the performance and efficiency of electronic components.

Latest Patents

Buerger's latest patents include the "Lamellar-derived microelectronic component array and method of fabrication" and the "Vertically wired integrated circuit and method of fabrication." The first patent describes sub-lithographic lamella and pillar structures defined by larger lines or lamellae. It details the creation of a three-dimensional SRAM cell structure as a vertical stack of wired transistors fabricated from crystalline silicon. This innovative design allows for the creation of a three-dimensional cell integrated circuit using a single mask step. Various structural features and methods of fabrication are elaborated upon, including peripheral interfaces and supplemental techniques.

The second patent also focuses on a three-dimensional SRAM cell structure, emphasizing the vertical stack of wired transistors. Similar to the first patent, it highlights the use of crystalline silicon and the ability to create a circuit along the walls of a vertical pillar. The detailed description of structural features and fabrication methods further underscores Buerger's expertise in this area.

Career Highlights

Throughout his career, Walter Richard Buerger, Jr. has demonstrated a commitment to advancing microelectronic technology. His innovative approaches to SRAM cell structures have positioned him as a key figure in the field. His patents reflect a deep understanding of the complexities involved in microelectronic fabrication and design.

Collaborations

Buerger has collaborated with notable individuals in the industry, including Jakob Hans Hohl and Mary Lundgren Long. These collaborations have likely contributed to the development and refinement of his innovative ideas and patents.

Conclusion

Walter Richard Buerger, Jr. is a distinguished inventor whose work in microelectronics has led to significant advancements in SRAM technology. His patents reflect a blend of creativity and technical expertise, making him a valuable contributor to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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