Palos Verdes, CA, United States of America

Walter L Bloss, Iii

This inventor holds 2 USPTO granted patents. Top assignee: Gte Laboratories Incorporated. Active years: 1985-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Walter L Bloss, Iii. Retrieved from https://idiyas.com/inventor/walter-l-bloss-iii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Sudbury, MA (US) (1985)
  • Palos Verdes, CA (US) (1991)

Company Filing History:


Years Active: 1985-1991

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2 patents (USPTO):Explore Patents

Title: Walter L. Bloss, III: A Pioneer in Semiconductor Innovations

Introduction

Walter L. Bloss, III, located in Palos Verdes, CA, is an accomplished inventor known for his significant contributions in the field of semiconductor technology. With a total of two patents to his name, his innovative work has greatly influenced the evolution of modern electronics, particularly in fiber optic communications and semiconductor devices.

Latest Patents

Walter's latest patents showcase his expertise and forward-thinking approach in semiconductor design:

1. **Semiconductor Device with Conductive Rectifying Rods** - This patent features a semiconductor device, specifically a Field Effect Transistor (FET), comprising a matrix of silicon with an array of conductive rods made from TaSi.sub.2. These rods create Schottky barriers with the semiconductor material, allowing for controlled current flow through the matrix by adjusting the gate contact.

2. **Multi-wavelength Demultiplexer for Fiber Optical Communication** - This optical demultiplexer includes a minimum of three relatively thick layers of direct band gap semiconductor material upon a substrate. The architecture is enhanced by thin layers of lattice-matched material that serve as barriers to prevent cross-layer photo-electron travel. Utilizing molecular beam epitaxy, this invention is pivotal for advancements in fiber optic technology.

Career Highlights

Walter L. Bloss, III is associated with GTE Laboratories Incorporated, where he continues to push the boundaries of semiconductor technology. His work, particularly on multi-wavelength optical devices, has substantial implications for high-speed communications, making him a key player in the research and development domain of his field.

Collaborations

Walter has worked alongside notable colleagues such as Brian M. Ditchek and Adrian I. Cogan, contributing to a collaborative environment that fosters innovation and excellence in semiconductor research and implementation.

Conclusion

Through his groundbreaking patents and collaborative efforts at GTE Laboratories Incorporated, Walter L. Bloss, III exemplifies the spirit of innovation in semiconductor technology. His contributions not only enhance the efficiency of electronic devices but also pave the way for future advancements in optical communication systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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