Burghausen, Germany

Waldemar Stein

This inventor holds 2 USPTO granted patents and 2 EPO patents. Top assignee: Siltronic Ag. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Waldemar Stein. Retrieved from https://idiyas.com/inventor/waldemar-stein

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: Waldemar Stein: Innovator in Silicon Crystal Production

Introduction

Waldemar Stein is a notable inventor based in Burghausen, Germany. He has made significant contributions to the field of silicon crystal production, holding 2 patents that showcase his innovative approach to technology.

Latest Patents

Waldemar's latest patents include an "Apparatus and process for producing a single crystal of silicon." This apparatus features a plate with a top side, an outer edge, and an inner edge, along with a central opening adjoining the inner edge and a tube extending from the central opening to beneath the bottom side of the plate. Another patent is titled "Method for producing a silicon single crystal," which describes a method for producing a silicon single crystal through a specific process.

Career Highlights

Waldemar Stein is currently associated with Siltronic AG, a leading company in the semiconductor industry. His work focuses on advancing the methods and apparatus used in the production of high-quality silicon crystals, which are essential for various electronic applications.

Collaborations

Waldemar collaborates with talented individuals such as Georg Brenninger and Maik Haeberlen, contributing to a dynamic team that drives innovation in their field.

Conclusion

Waldemar Stein's contributions to silicon crystal production highlight his role as a key inventor in the semiconductor industry. His patents and collaborative efforts continue to influence advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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