This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Centre National De La Recherche Scientifique. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Innovations of Véronique Bardinal-Delagnes
Introduction
Véronique Bardinal-Delagnes is a notable inventor based in Castelmaurou, France. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique method for producing semiconductor devices.
Latest Patents
Véronique holds a patent for a "Planar oxidation method for producing a localized buried insulator." This invention involves a method of producing a semiconductor device, which includes several steps. These steps consist of forming first, second, and third semiconductor layers, where the first and second layers contain a smaller concentration of oxidizable species than the second layer. A mask is formed on the third layer, followed by the oxidation of the second layer through the diffusion of oxidizing species.
Career Highlights
Véronique is affiliated with the Centre National de la Recherche Scientifique, a prestigious research institution in France. Her work at this institution has allowed her to explore and develop advanced technologies in semiconductor fabrication.
Collaborations
She has collaborated with notable colleagues, including Antonio Munoz-Yague and Guilhem Almuneau. These collaborations have further enriched her research and innovation efforts.
Conclusion
Véronique Bardinal-Delagnes is a pioneering inventor whose work in semiconductor technology has made a lasting impact. Her innovative methods continue to influence the field and contribute to advancements in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
