The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Feb. 02, 2006
Guilhem Almuneau, Montlaur, FR;
Antonio Munoz-yague, Toulouse, FR;
Thierry Camps, Toulouse, FR;
Chantal Fontaine, Toulouse, FR;
Véronique Bardinal-delagnes, Castelmaurou, FR;
Guilhem Almuneau, Montlaur, FR;
Antonio Munoz-Yague, Toulouse, FR;
Thierry Camps, Toulouse, FR;
Chantal Fontaine, Toulouse, FR;
Véronique Bardinal-Delagnes, Castelmaurou, FR;
Abstract
The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (), whereby the first and second layers () contain a smaller concentration of oxidizable species than the second layer (); forming a mask () on the third layer (); and oxidizing the second layer () with the diffusion of oxidizing species through the third layer ().