This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Centre National De La Recherche Scientifique. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Chantal Fontaine: Innovator in Semiconductor Technology
Introduction
Chantal Fontaine is a prominent inventor based in Toulouse, France. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent related to the production of localized buried insulators.
Latest Patents
Chantal Fontaine holds a patent for a "Planar oxidation method for producing a localized buried insulator." This invention involves a method for creating a semiconductor device, which includes several steps. These steps consist of forming first, second, and third semiconductor layers, where the first and second layers contain a smaller concentration of oxidizable species than the second layer. A mask is then formed on the third layer, followed by the oxidation of the second layer through the diffusion of oxidizing species.
Career Highlights
Chantal Fontaine is affiliated with the Centre National de la Recherche Scientifique, a leading research institution in France. Her work has been instrumental in advancing semiconductor technology, showcasing her expertise and dedication to innovation.
Collaborations
Chantal has collaborated with notable colleagues, including Antonio Munoz-Yague and Thierry Camps. These partnerships have further enriched her research and contributions to the field.
Conclusion
Chantal Fontaine's work in semiconductor technology exemplifies her innovative spirit and commitment to advancing the industry. Her patent and collaborations highlight her significant role in the scientific community.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile