This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Centre National De La Recherche Scientifique. Active years: 2011.
Company Filing History:
Years Active: 2011
Title: Antonio Munoz-Yague: Innovator in Semiconductor Technology
Introduction
Antonio Munoz-Yague is a prominent inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on methods that enhance the production of semiconductor devices, showcasing his expertise and dedication to advancing technology.
Latest Patents
Antonio Munoz-Yague holds a patent for a "Planar oxidation method for producing a localized buried insulator." This invention relates to a method of producing a semiconductor device, which involves several key steps. These steps include forming first, second, and third semiconductor layers, where the first and second layers contain a smaller concentration of oxidizable species than the second layer. Additionally, a mask is formed on the third layer, followed by the oxidation of the second layer through the diffusion of oxidizing species.
Career Highlights
Antonio is affiliated with the Centre National de La Recherche Scientifique, a leading research institution in France. His role at this esteemed organization allows him to collaborate with other experts in the field and contribute to groundbreaking research in semiconductor technology.
Collaborations
Antonio has worked alongside notable colleagues, including Véronique Bardinal-Delagnes and Thierry Camps. Their collaborative efforts have furthered advancements in semiconductor research and development.
Conclusion
Antonio Munoz-Yague is a distinguished inventor whose work in semiconductor technology has led to innovative solutions in the industry. His contributions, particularly through his patent, demonstrate his commitment to enhancing the capabilities of semiconductor devices.