Fremont, CA, United States of America

Volodymyr Voznyuk


Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2017-2019

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3 patents (USPTO):Explore Patents

Title: Innovations of Volodymyr Voznyuk

Introduction

Volodymyr Voznyuk is a notable inventor based in Fremont, California. He has made significant contributions to the field of magnetic memory devices, holding three patents to his name. His work focuses on advanced methods and apparatuses that enhance the performance and efficiency of magnetic junctions.

Latest Patents

One of Voznyuk's latest patents is titled "Method and apparatus for measuring exchange stiffness at a patterned device level." This invention involves a method for determining the exchange stiffness of a free layer in a magnetic junction through spin torque ferromagnetic resonance (ST-FMR) measurements. The measurements reveal characteristic frequencies that correspond to spin wave modes in the free layer, allowing for precise calculations of exchange stiffness.

Another significant patent is the "DMTJ structure for sub-25NM designs with cancelled flowering field effects." This invention describes a magnetic memory device that includes a first reference magnetic layer, two tunnel barrier layers, and a free magnetic layer. The design ensures that the in-plane magnetostatic field from the first reference magnetic layer is minimized, enhancing the device's performance.

Career Highlights

Volodymyr Voznyuk is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of magnetic memory technology. His work has been instrumental in advancing the capabilities of magnetic junctions, contributing to the development of next-generation memory devices.

Collaborations

Throughout his career, Voznyuk has collaborated with notable colleagues, including Dmytro Apalkov and Robert Beach. These collaborations have fostered a productive environment for innovation and have led to the successful development of several cutting-edge technologies.

Conclusion

Volodymyr Voznyuk's contributions to the field of magnetic memory devices are significant and impactful. His innovative patents and collaborations highlight his expertise and dedication to advancing technology in this area.

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