The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Mar. 25, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Volodymyr Voznyuk, Fremont, CA (US);

Dustin Erickson, Morgan Hill, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 43/08 (2013.01);
Abstract

An MTJ structure and method for providing the same are described. The method may include providing a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. Providing the free layer and/or the pinned layer may include depositing a portion of the desired MTJ layer, depositing a sacrificial layer, annealing the MTJ and sacrificial layer, removing at least a portion of the sacrificial layer, and depositing a remaining portion of the desired MTJ layer. The steps of depositing a sacrificial layer, annealing, and removing the sacrificial layer may be repeated multiple times with process conditions selected for each stage so as to reduce the risk of damage to the underlying MTJ layer. The desired MTJ layer may be the free layer, the pinned layer, or both.


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