The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Apr. 03, 2017
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Robert Beach, Los Gatos, CA (US);

Dmytro Apalkov, San Jose, CA (US);

Volodymyr Voznyuk, Fremont, CA (US);

Ilya Krivorotov, San Jose, CA (US);

Chengcen Sha, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/60 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); G11C 11/02 (2006.01); H01L 43/12 (2006.01); G01N 24/10 (2006.01); G11C 29/02 (2006.01); G11C 29/24 (2006.01); G11C 29/50 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G01R 33/60 (2013.01); G01N 24/10 (2013.01); G11C 11/02 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/24 (2013.01); G11C 29/50008 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/1675 (2013.01); G11C 2029/5006 (2013.01); H01L 27/222 (2013.01);
Abstract

A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.


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