Fuquay, NC, United States of America

Vladamir A Dmitriev

This inventor holds 1 USPTO granted patent. Top assignee: USA as Represented by Secretary of the Navy. Active years: 1998.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Vladamir A Dmitriev: Innovator in Silicon Carbide Technology

Introduction

Vladamir A Dmitriev is a notable inventor based in Fuquay, NC (US). He has made significant contributions to the field of semiconductor materials, particularly in silicon carbide technology. His innovative work has led to advancements that are both cost-effective and efficient.

Latest Patents

Dmitriev holds a patent for a technology titled "Lower bandgap, lower resistivity, silicon carbide heteroepitaxial - A silicon carbide semiconductor material; and method of making same." This patent describes a method in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. The growth occurs at temperatures of 1200 degrees Celsius or less, resulting in a heterolayer with a reduced bandgap and reduced contact resistance. This method can be fabricated using less expensive equipment typically used for silicon-based semiconductors. He has 1 patent to his name.

Career Highlights

Dmitriev's career has been marked by his work with the United States Navy, where he is represented by the Secretary of the Navy. His contributions to semiconductor technology have been recognized within the industry, showcasing his expertise and innovative spirit.

Collaborations

Dmitriev has collaborated with notable colleagues, including Kenneth George Irvine and Michael Spencer. Their combined efforts have furthered advancements in semiconductor technology and have contributed to the success of their projects.

Conclusion

Vladamir A Dmitriev is a distinguished inventor whose work in silicon carbide technology has made a significant impact in the field of semiconductors. His innovative patent and collaborations highlight his commitment to advancing technology in a cost-effective manner.

Profile summary based on public USPTO records.
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