The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Jan. 17, 1995
Applicant:
Inventors:
Vladamir A Dmitriev, Fuquay, NC (US);
Kenneth G Irvine, Apex, NC (US);
Michael Spencer, Washington, DC (US);
Galina Kelner, Potomac, MD (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 88 ; 117951 ;
Abstract
A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200.degree. C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.