This inventor holds 1 USPTO granted patent and 2 published patent applications and 2 EPO patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2002.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2002
Title: Vittorio Privitera - Innovator in Graphene Layer Growth
Introduction
Vittorio Privitera is an inventor based in Acicastello, Italy. He is known for his innovative work in the field of semiconductor devices, particularly focusing on methods for graphene layer growth. His research aims to enhance the performance and efficiency of semiconductor technologies.
Latest Patent Applications
Vittorio Privitera has submitted a patent application titled "A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILICIDE FORMATION ON A SEMICONDUCTOR DEVICE." This application describes a method for forming a graphene layer on a semiconductor substrate, which includes the use of a metal catalyst layer. The process involves depositing and patterning the metal catalyst layer on the semiconductor substrate, facilitating a graphene growth process on the exposed surfaces. This innovative approach aims to improve the functionality of semiconductor diodes and optoelectronic devices.
Conclusion
Vittorio Privitera's contributions to the field of semiconductor technology through his innovative methods for graphene layer growth highlight his potential impact on future advancements in this area. His work represents a significant step forward in the development of efficient semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile