The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Jan. 27, 1999
Davide Patti, Catania, IT;
Francesco Priolo, San Giovanni la Punta, IT;
Vittorio Privitera, Acicastello, IT;
Giorgia Franzo, San Giovanni la Punta, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
An electronic power device is integrated on a substrate of semiconductor material having a first conductivity type, on which an epitaxial layer of the same type of conductivity is grown. The power device comprises a power stage PT and a control stage CT, this latter enclosed in an isolated region having a second type of conductivity type. The power stage PT comprises a first buried area having the second type of conductivity type and a second buried area, partially overlapping the first buried area and having the first conductivity type. The isolation region and the control stage CT comprise respectively a third buried area, having the second conductivity type, and a fourth buried area, partially overlapped to the third buried area and having the first conductivity type. Said first, second, third and fourth buried areas are formed in the epitaxial layers at a depth sufficient to allow the power stage PT and the control stage CT to be entirely formed in the epitaxial layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile