Morrisville, NC, United States of America

Vipindis Pala


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations of Vipindis Pala in Transistor Technology

Introduction

Vipindis Pala is an accomplished inventor based in Morrisville, NC (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistor devices. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.

Latest Patents

Vipindis Pala holds a patent for "Field effect transistor devices with buried well regions and epitaxial layers." This patent describes a method of forming a transistor device that includes providing a drift layer with a first conductivity type and an upper surface. The process involves forming first regions in the drift layer, creating a body layer, and establishing a vertical conduction region, among other steps. This invention enhances the performance and efficiency of transistor devices.

Career Highlights

Vipindis Pala is currently employed at Cree GmbH, a company known for its advancements in semiconductor technology. His work at Cree GmbH has allowed him to further develop his skills and contribute to cutting-edge innovations in the industry. With a total of 1 patent, he has established himself as a notable figure in the field of electronics.

Collaborations

Throughout his career, Vipindis Pala has collaborated with talented individuals such as Lin Cheng and Jason Patrick Henning. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Vipindis Pala's contributions to the field of transistor technology exemplify the spirit of innovation. His patent and work at Cree GmbH highlight his commitment to advancing semiconductor technology.

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