The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Mar. 13, 2013
Cree, Inc., Durham, NC (US);
Vipindis Pala, Morrisville, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Jason Henning, Carrboro, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Palmour, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method of forming a transistor device includes providing a drift layer having a first conductivity type and an upper surface, forming first regions in the drift layer and adjacent the upper surface, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another, forming a body layer on the drift layer including the source regions, forming spaced apart source regions in the body layer above respective ones of the first regions, forming a vertical conduction region in the body layer between the source regions, the vertical conduction region having the first conductivity type and defining channel regions in the body layer between the vertical conduction region and respective ones of the source regions, forming a gate insulator on the body layer, and forming a gate contact on the gate insulator.