Vincent E Dorgan

Title: Vincent E Dorgan: Innovator in Semiconductor Technology

Introduction

Vincent E Dorgan is a prominent inventor based in Hillsboro, OR (US), known for his significant contributions to semiconductor technology. He holds a total of six patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

One of his latest patents involves metal-oxide-semiconductor field-effect transistors (MOSFET) as antifuse elements. This invention describes techniques for an integrated circuit that includes a MOSFET with a source area, a channel area, a gate electrode, and a drain area. The channel area features a first channel region with a dopant of a first concentration next to the source area, and a second channel region with a higher dopant concentration next to the drain area. The design includes a source electrode in contact with the source area, a gate oxide layer above the channel area, and a gate electrode positioned above the gate oxide layer. This configuration allows for the establishment of resistances between the source electrode and the gate electrode, facilitating a programming operation.

Another notable patent by Dorgan focuses on FinFET transistors as antifuse elements. This invention outlines techniques for an integrated circuit that utilizes a FinFET transistor as an antifuse element. The design includes a path through a fin area to couple a source electrode and a drain electrode after a programming operation. The FinFET transistor comprises a source electrode in contact with a source area, a drain electrode in contact with a drain area, and a fin area made of silicon situated between the source and drain areas. After applying a programming voltage, a current is generated, forming a path through the fin area that connects the source and drain electrodes.

Career Highlights

Vincent E Dorgan has made significant strides in his career, particularly through his work at Intel Corporation. His innovative patents have contributed to advancements in semiconductor technology, enhancing the performance and efficiency of integrated circuits.

Collaborations

Dorgan has collaborated with notable colleagues, including Uddalak Bhattacharya and Jeffrey Hicks. Their combined expertise has fostered a collaborative environment that promotes innovation and technological advancement.

Conclusion

Vincent E Dorgan is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the development of integrated circuits and semiconductor devices.