St Maximin la Sainte Baume, France

Vincent Brissonneau



 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Vincent Brissonneau: Innovator in Semiconductor Technology

Introduction

Vincent Brissonneau is a notable inventor based in St Maximin la Sainte Baume, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for texturing semiconductor substrates. His work has implications for various applications in electronics and materials science.

Latest Patents

Vincent Brissonneau holds a patent for a "Method for randomly texturing a semiconductor substrate." This invention involves a process that includes forming a plurality of cavities of random shapes, depths, and distribution in an etch mask through non-homogeneous reactive-ion etching. The method allows for the creation of a first rough random design, which is then transferred to the substrate using reactive-ion etching, resulting in a second rough random design on the substrate's surface.

Career Highlights

Throughout his career, Vincent has worked with prestigious institutions such as Université d'Aix-Marseille and the Centre National de la Recherche Scientifique. His experience in these organizations has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Vincent Brissonneau has collaborated with notable colleagues, including Ludovic Escoubas and Gerard Jean Louis Berginc. These partnerships have enriched his research and expanded the impact of his inventions.

Conclusion

Vincent Brissonneau's innovative work in semiconductor technology exemplifies the importance of creativity and collaboration in advancing scientific knowledge. His contributions continue to influence the field and inspire future innovations.

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