Centre National De La Recherche Scientifique

Thales

Université´ D'aix-marseille

Vincent Brissonneau

Jean-Jacques Simon

Ludovic Escoubas

Gerard Jean Louis Berginc

Gerard Jean Berginc

The invention relates to a method for texturing a semiconductor substrate (), comprising steps consisting in forming a plurality of cavities of random shapes, depths and distribution, in an etch mask (), by means of non-homogeneous reactive-ion etching, forming a first rough random design, and etching the substrate using the etch mask, by means of reactive-ion etching, in such a way as to transfer the first rough random design into the substrate and to produce a second rough random design (), comprising cavities () of random shapes, depths (d) and distribution, on the surface of the substrate.

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St Maximin la Sainte Baume, France

Vincent Brissonneau