The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jun. 02, 2015
Université D'aix-marseille, Marseilles, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Thales, Neuilly sur Seine, FR;
Ludovic Escoubas, Marseilles, FR;
Gerard Jean Louis Berginc, Thiais, FR;
Jean-Jacques Simon, Peypin, FR;
Vincent Brissonneau, St Maximin la Sainte Baume, FR;
UNIVERSITÉ D'AIX-MARSEILLE, Marseilles, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
THALES, Neuilly sur Seine, FR;
Abstract
The invention relates to a method for texturing a semiconductor substrate (), comprising steps consisting in forming a plurality of cavities of random shapes, depths and distribution, in an etch mask (), by means of non-homogeneous reactive-ion etching, forming a first rough random design, and etching the substrate using the etch mask, by means of reactive-ion etching, in such a way as to transfer the first rough random design into the substrate and to produce a second rough random design (), comprising cavities () of random shapes, depths (d) and distribution, on the surface of the substrate.