Viktoryia Lapidus

Title: Viktoryia Lapidus: Innovator in Semiconductor Technology

Introduction

Viktoryia Lapidus is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her innovative work has garnered attention in the industry, particularly for her advancements in diode technology.

Latest Patents

One of her latest patents is focused on a diode that includes a plurality of trenches. This diode features a semiconductor body with a first main surface and a second main surface opposite to it. The design includes an anode region situated between the first main surface and a cathode region, with an anode pad area electrically connected to the anode region. The diode's unique structure incorporates multiple trenches extending into the semiconductor body, enhancing its functionality.

Another notable patent is the RC IGBT, which comprises an IGBT section and at least three diode sections within its active region. The arrangement of these diode sections adheres to specific design rules, showcasing her expertise in creating efficient semiconductor devices.

Career Highlights

Viktoryia has worked with leading companies in the semiconductor industry, including Infineon Technologies Austria AG and Infineon Technologies AG. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking technologies.

Collaborations

Throughout her career, Viktoryia has collaborated with esteemed colleagues such as Christian Philipp Sandow and Frank Dieter Pfirsch. These partnerships have further enriched her work and expanded her impact in the field.

Conclusion

Viktoryia Lapidus stands out as an influential inventor in semiconductor technology, with a focus on innovative diode designs and IGBT systems. Her contributions continue to shape the future of the industry.