Infineon Technologies Austria Ag

Infineon Technologies Ag

Viktoryia Lapidus

Frank Dieter Pfirsch

Christian Philipp Sandow

Anton Mauder

Erich Griebl

Antonio Vellei

Manfred Pfaffenlehner

Holger Huesken

Philip Christoph Brandt

Matteo Dainese

Alice Pei-Shan Hsieh

A diode is proposed. The diode includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. The diode further includes an anode region and a cathode region. The anode region is arranged between the first main surface and the cathode region. An anode pad area is electrically connected to the anode region. The diode further includes a plurality of trenches extending into the semiconductor body from the first main surface. A first group of the plurality of trenches includes a first trench electrode. A second group of the plurality of trenches includes a second trench electrode. The first trench electrode is electrically coupled to the anode pad area via an anode wiring line and the second trench electrode.

Diode including a plurality of trenches

An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

RC IGBT

A power semiconductor device includes a semiconductor substrate with an edge termination region between an active region and a lateral rim. Non-metallic electrodes extend in the edge termination region on a front side of the substrate, and include at least three spaced apart non-metallic electrodes. One non-metallic electrode is an inner non-metallic electrode having an inner edge. Another non-metallic electrode is an outer non-metallic electrode having an outer edge. The shortest distance between the inner edge of the inner non-metallic electrode and the outer edge of the most non-metallic electrode is defined as distance p. Each non-metallic electrode is electrically connected to a respective doping region of the substrate by at least two respective metallic plugs each extending through a respective first opening formed in an electrically insulating bottom layer. The shortest distance d between any two metallic plugs of different non-metallic electrodes is larger than the distance p.

Power semiconductor device

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Munich, Germany

Viktoryia Lapidus