Austin, TX, United States of America

Vikram Shenoy


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2002-2006

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2 patents (USPTO):Explore Patents

Title: Vikram Shenoy: Innovator in Memory Technology

Introduction

Vikram Shenoy is a prominent inventor based in Austin, TX, known for his contributions to memory technology. With a total of 2 patents, he has made significant advancements in the field of memory address decoding and stress testing for static random access memory (SRAM) devices.

Latest Patents

Shenoy's latest patents include innovative designs for glitch-free memory address decoding circuits and methods, as well as memory subsystems utilizing these advancements. One of his notable inventions is a memory address decoder circuitry that activates a corresponding memory access control conductor in response to registered address bits. This design features an address register that stores received address bits and includes reset circuitry to minimize transition glitches during the latching process. Another significant patent involves a stress test circuit and method for SRAM cells, which utilizes a resistance element and a switch to create an electrical path that tests the stability of digital values stored in SRAM cells.

Career Highlights

Vikram Shenoy is currently employed at Cirrus Logic Inc., where he continues to develop cutting-edge technologies in memory systems. His work has been instrumental in enhancing the reliability and performance of memory devices.

Collaborations

Throughout his career, Shenoy has collaborated with notable colleagues, including Dimitris Pantelakis and Robert Arthur Jensen, contributing to various innovative projects in the field of memory technology.

Conclusion

Vikram Shenoy's contributions to memory technology through his patents and work at Cirrus Logic Inc. highlight his role as a key innovator in the industry. His advancements in memory address decoding and stress testing methods are paving the way for more reliable and efficient memory systems.

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