The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2002

Filed:

Sep. 17, 2001
Applicant:
Inventors:

John L. Melanson, Austin, TX (US);

Dimitris Pantelakis, Austin, TX (US);

Robert A. Jensen, Austin, TX (US);

Vikram Shenoy, Austin, TX (US);

Assignee:

Cirrus Logic, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

A stress test circuit and method for static random access memory (“SRAM”) cells of an SRAM device are disclosed. The stress test component has a resistance element and a switch component to electrically couple the resistance element between a bit line and complementary bit line of an SRAM cell storing a digital value. Stress test component is activated to electrically couple the resistance element to the bit line and complementary bit line. An electrical path is created causing a voltage on an SRAM circuit path maintaining the digital value to be pulled in one direction by a stress current. The electrical path causes another voltage on another SRAM circuit path maintaining a complementary digital value to be pulled in an opposite direction by the stress current. The SRAM cell is then read to determine whether the digital value has changed state.


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