Berlin, Germany

Victor Sidorov

This inventor holds 2 USPTO granted patents and 2 EPO patents. Top assignee: Forschungsverbund Berlin E.v.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Victor Sidorov. Retrieved from https://idiyas.com/inventor/victor-sidorov-ro6m5dba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2014

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2 patents (USPTO):Explore Patents

Title: Victor Sidorov: Innovator in Semiconductor Technology

Introduction

Victor Sidorov is a prominent inventor based in Berlin, Germany. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to improving electronic components.

Latest Patents

One of his latest patents is for a HEMT semiconductor component with field plates. This invention focuses on a transistor design that reduces the electric field in critical areas using field plates. This design allows for a more uniform distribution of the electric field along the component, smoothing the electric field in the active region and reducing field peaks. The semiconductor component features a substrate with an active layer structure, along with source and drain contacts that are mutually spaced. Additionally, a gate contact is provided on the active layer structure, with a gate field plate electrically connected to it. The design also includes at least two separate field plates placed directly on the active layer structure or on a passivation layer.

Another notable patent involves a method for producing a metallization with two multiple alternating metallization layers for at least one contact pad. This invention relates to a method that can be produced through physical gas phase separation, ensuring sufficient adhesion of a lot bump. The process includes applying a contact pad to a substrate, followed by a barrier layer and a metallization layer. The metallization is designed as a layer structure with two alternating layers, where the first layer is made of nickel or an Ni alloy, and the second layer is made of a different electrically conductive material.

Career Highlights

Victor Sidorov is currently associated with Forschungsverbund Berlin E.V., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing technologies that are critical for modern electronics.

Collaborations

He has collaborated with notable colleagues such as Joachim Wuerfl and Eldat Bahat-Treidel, contributing to a dynamic research environment that fosters innovation.

Conclusion

Victor Sidorov's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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