La Terrasse, France

Veronique De-Jonghe

This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Veronique De-Jonghe. Retrieved from https://idiyas.com/inventor/veronique-de-jonghe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Veronique De-Jonghe: Innovator in Semiconductor Technology

Introduction

Veronique De-Jonghe is a prominent inventor based in La Terrasse, France. She has made significant contributions to the field of semiconductor technology, particularly in the area of silicide formation on wafers. Her innovative approach has garnered attention in the industry.

Latest Patents

Veronique holds a patent for a method of selective formation of silicide on a semiconductor wafer. This method involves depositing a metal layer over the entire wafer prior to the application of the SiProt mask. This technique ensures that any etching of the mask does not cause surface deterioration of the silicon wafer. She has 1 patent to her name.

Career Highlights

Veronique is currently employed at NXP B.V., a leading company in the semiconductor industry. Her work at NXP B.V. has allowed her to explore and develop cutting-edge technologies that enhance semiconductor manufacturing processes.

Collaborations

Throughout her career, Veronique has collaborated with notable colleagues, including Eric Gerritsen and Srdjan Kordic. These collaborations have contributed to her success and the advancement of technology in her field.

Conclusion

Veronique De-Jonghe is a trailblazer in semiconductor technology, with her innovative methods paving the way for advancements in the industry. Her contributions and collaborations highlight her importance as an inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…