The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Sep. 26, 2007
Applicants:
Eric Gerritsen, Bernin, FR;
Veronique De-jonghe, La Terrasse, FR;
Srdjan Kordic, Biviers, FR;
Inventors:
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823443 (2013.01); H01L 21/28518 (2013.01); H01L 21/823418 (2013.01); H01L 21/823814 (2013.01); H01L 21/823835 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of selective formation of silicide on a semiconductor wafer, wherein the metal layer is deposited over the entire wafer prior to application of the SiProt mask such that any etching of the mask does not cause any surface deterioration of the silicon wafer.