Carrollton, TX, United States of America

Vernon G McKenny

This inventor holds 8 USPTO granted patents. Top assignees: Mostek Corporation, Other. Active years: 1978-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vernon G McKenny. Retrieved from https://idiyas.com/inventor/vernon-g-mckenny

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 7

Forward Citations = 262(Granted Patents)


Location History:

  • Carrollton, TX (US) (1978 - 1982)
  • Breckenridge, CO (US) (1994)

Company Filing History:


Years Active: 1978-1994

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8 patents (USPTO):Explore Patents

Title: The Innovations of Vernon G McKenny

Introduction

Vernon G McKenny is a notable inventor based in Carrollton, TX (US), recognized for his contributions to the field of programmable read-only memory circuits. With a total of 8 patents to his name, McKenny has made significant advancements in memory technology.

Latest Patents

One of his latest patents is a fuse protection circuit designed for electrically programmable read-only memory circuits. This innovative circuit includes a fusing element, such as an antifuse, connected between a bitline and the drain of the access transistor. It is engineered to prevent inadvertent activation due to programming voltages applied to the bitline when the access transistor is not being addressed. The addition of a capacitor between the drain of the access transistor and the bitline protects the fusing element from such inadvertent activation. Another significant patent is for a three-layer floating gate memory transistor with an erase gate over the field. This field-effect transistor storage device is intended for use in programmable read-only memories that utilize a floating gate and a control gate. The design includes an erase gate adjacent to at least one edge of the floating gate, allowing for the removal of charge stored on the floating gate. The method of electrically erasing the storage device involves holding the control gate at a fixed potential while applying a relatively low voltage to the erase gate.

Career Highlights

Throughout his career, McKenny has worked with various companies, including Mostek Corporation, where he contributed to the development of advanced memory technologies. His work has had a lasting impact on the industry, particularly in the realm of programmable memory devices.

Collaborations

McKenny has collaborated with notable individuals in the field, including Tsiu Chiu Chan and David L Taylor. Their combined expertise has furthered the advancements in memory technology.

Conclusion

Vernon G McKenny's innovative contributions to programmable read-only memory circuits have established him as a significant figure in the field of electronics. His patents reflect a deep understanding of memory technology and its applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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