Shah Alam, Malaysia

Vermal Raja Manikam

This inventor holds 1 USPTO granted patent. Top assignee: Freescale Semiconductor,inc.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vermal Raja Manikam. Retrieved from https://idiyas.com/inventor/vermal-raja-manikam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations of Vermal Raja Manikam

Introduction

Vermal Raja Manikam is an accomplished inventor based in Shah Alam, Malaysia. She has made significant contributions to the field of semiconductor technology. Her innovative approach has led to the development of a unique method for encapsulating substrates.

Latest Patents

Vermal holds a patent for a "Method and apparatus for molding substrate." This invention involves a process where a hardened encapsulant material is placed in a container, heated, and stirred until it reaches a liquid or gel state. The liquid encapsulant is then maintained in a vacuum state and dispensed over semiconductor dies, allowing it to cool slightly before covering the die.

Career Highlights

Vermal is currently employed at Freescale Semiconductor, Inc., where she continues to push the boundaries of innovation in semiconductor manufacturing. Her work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Some of her notable coworkers include Boon Yew Low and Vittal Raja Manikam, who have collaborated with her on various projects within the company.

Conclusion

Vermal Raja Manikam's contributions to the field of semiconductor technology exemplify her innovative spirit and dedication to advancing the industry. Her patent and ongoing work at Freescale Semiconductor, Inc. highlight her role as a key player in technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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