Venkatram Venkatasamy

This inventor holds 14 USPTO granted patents and 2 published patent applications, primarily in Memory Cell Technology. Top assignees: Seagate Technology Incorporated, International Business Machines Corporation. Active years: 2010-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Venkatram Venkatasamy. Retrieved from https://idiyas.com/inventor/venkatram-venkatasamy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 42.9

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 115(Granted Patents)

Company Filing History:

13 out of 8,752

Seagate Technology Incorporated

patents

1 out of 166,483

International Business Machines Corporation

patents

Years Active: 2010-2021

Loading Chart...

Areas of Expertise:

Near Field Transducers

Electrodeposited Materials

Heat Assisted Magnetic Recording

Programmable Metallization Cells

Resistive Memory Cells

Nanoporous Layers

Conductive Materials

Bilayer Heat Sinks

Methods of Forming

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11015256 - Near field transducers including electrodeposited plasmonic materials and methods of forming (2021-05-25),

2. 10100422 - Near field transducers including electrodeposited plasmonic materials and methods of forming (2018-10-16),

3. 9305575 - Heat assisted magnetic recording heads having bilayer heat sinks (2016-04-05),

4. 8940577 - Programmable metallization cells and methods of forming the same (2015-01-27),

5. 8902719 - Heat assisted magnetic recording heads having bilayer heat sinks (2014-12-02),

6. 8435827 - Programmable resistive memory cell with sacrificial metal (2013-05-07),

7. 8343801 - Method of forming a programmable metallization memory cell (2013-01-01),

8. 8293571 - Programmable metallization cells and methods of forming the same (2012-10-23),

9. 8288753 - Programmable resistive memory cell with oxide layer (2012-10-16),

10. 8097874 - Programmable resistive memory cell with sacrificial metal (2012-01-17),

11. 8058646 - Programmable resistive memory cell with oxide layer (2011-11-15),

12. 7918984 - Method of electrodepositing germanium compound materials on a substrate (2011-04-05),

13. 7842938 - Programmable metallization cells and methods of forming the same (2010-11-30),

14. 7750386 - Memory cells including nanoporous layers containing conductive material (2010-07-06),

Title: The Inventor Venkatram Venkatasamy: Pioneering Innovations in Edina, MN

Introduction: Venkatram Venkatasamy, a distinguished inventor based in Edina, MN, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Venkatram Venkatasamy holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and ingenuity in various sectors.

Career Highlights: With over two decades of experience in research and development, Venkatram Venkatasamy has worked with leading tech companies, universities, and research institutions, consistently pushing the boundaries of what is possible.

Collaborations: Throughout his career, Venkatram Venkatasamy has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of creativity and excellence in all his projects.

Conclusion: Venkatram Venkatasamy's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and researchers, making him a true pioneer in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: