The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Nov. 12, 2008
Wei Tian, Bloomington, MN (US);
Venkatram Venkatasamy, Edina, MN (US);
Ming Sun, Eden Prairie, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Insik Jin, Eagan, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Wei Tian, Bloomington, MN (US);
Venkatram Venkatasamy, Edina, MN (US);
Ming Sun, Eden Prairie, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Insik Jin, Eagan, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.