Valery Shumilin

Title: Valery Shumilin and Low-Dielectric-Constant Materials

Introduction

Valery Shumilin is an inventor associated with Ashkelon, Israel. His patent work addresses materials and structures used in semiconductor manufacturing.

Latest Patents

Shumilin is credited with 1 patent, titled “Forming Low Dielectric Constant Dielectric Materials.” The invention describes forming a damascene structure in which metal lines are separated by a dielectric layer. Selected portions of the layer may be ion-implanted with carbon or inert species to reduce their dielectric constant while leaving the bulk material unaffected. This approach aims to achieve low dielectric constants while preserving the mechanical strength of the dielectric layer.

Career Highlights

The available information identifies Shumilin’s location as Ashkelon, Israel, and records one patent in his name. No company affiliation is specified.

Collaborations

Yakov Shor and Semeon Altshuler are listed as Shumilin’s coworkers.

Conclusion

Valery Shumilin’s recorded invention focuses on selectively lowering dielectric constants in damascene structures while retaining the mechanical strength needed for semiconductor applications.