The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7935627 B1

PDF
Full Text
Expired
Date of Patent:
May. 03, 2011

Filed:

Mar. 05, 2009
Applicants:

Yakov Shor, Beer Sheva, IL;

Semeon Altshuler, Rishon Le Zion, IL;

Valery Shumilin, Ashkelon, IL;

Alexander Ripp, Beer Sheva, IL;

Inventors:

Yakov Shor, Beer Sheva, IL;

Semeon Altshuler, Rishon Le Zion, IL;

Valery Shumilin, Ashkelon, IL;

Alexander Ripp, Beer Sheva, IL;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.


Find Patent Forward Citations

Shor, Yakov. (2011). Forming low dielectric constant dielectric materials (U.S. Patent No. 7935627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7935627

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…