This inventor holds 1 USPTO granted patent. Top assignee: Globalwafers Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Vahid Klalajzadeh: Patent Innovation in Crystal-Growth Technology
Introduction
Vahid Klalajzadeh is an inventor associated with GlobalWafers Co., Ltd. and based in O’Fallon, Missouri. His patent work addresses a specialized challenge in growing single-crystal ingots: applying localized heat to the ingot edge.
Latest Patents
Klalajzadeh is credited with 1 patent, titled “Single Crystal Ingot Puller with High-Power Laser Beam as Auxiliary Heating Source.” The invention describes an ingot puller with a crucible that holds a melt from which a single-crystal ingot is grown. A laser system directs a beam to the ingot edge, while a controller adjusts the laser’s power to raise the local temperature of the edge region.
Career Highlights
The patent reflects Klalajzadeh’s contribution to crystal-growth equipment and process technology. By using a high-power laser as an auxiliary heating source, the disclosed system provides a way to selectively heat an ingot’s edge during growth.
Collaborations
Klalajzadeh’s listed coworker is Sumeet S. Bhagavat. His work is associated with GlobalWafers Co., Ltd.
Conclusion
Vahid Klalajzadeh’s patent documents an approach to localized laser heating in single-crystal ingot production, highlighting his contribution to materials-processing innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile