O'Fallon, MO, United States of America

Vahid Klalajzadeh

This inventor holds 1 USPTO granted patent. Top assignee: Globalwafers Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vahid Klalajzadeh. Retrieved from https://idiyas.com/inventor/vahid-klalajzadeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Vahid Klalajzadeh: Patent Innovation in Crystal-Growth Technology

Introduction

Vahid Klalajzadeh is an inventor associated with GlobalWafers Co., Ltd. and based in O’Fallon, Missouri. His patent work addresses a specialized challenge in growing single-crystal ingots: applying localized heat to the ingot edge.

Latest Patents

Klalajzadeh is credited with 1 patent, titled “Single Crystal Ingot Puller with High-Power Laser Beam as Auxiliary Heating Source.” The invention describes an ingot puller with a crucible that holds a melt from which a single-crystal ingot is grown. A laser system directs a beam to the ingot edge, while a controller adjusts the laser’s power to raise the local temperature of the edge region.

Career Highlights

The patent reflects Klalajzadeh’s contribution to crystal-growth equipment and process technology. By using a high-power laser as an auxiliary heating source, the disclosed system provides a way to selectively heat an ingot’s edge during growth.

Collaborations

Klalajzadeh’s listed coworker is Sumeet S. Bhagavat. His work is associated with GlobalWafers Co., Ltd.

Conclusion

Vahid Klalajzadeh’s patent documents an approach to localized laser heating in single-crystal ingot production, highlighting his contribution to materials-processing innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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