Yorktown Heights, NY, United States of America

Uri Sivan

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1992.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:

goldMedal1 out of 834,453 
Other
 patents

Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Innovations of Uri Sivan in Semiconductor Technology

Introduction

Uri Sivan is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor devices, particularly in the area of electron wave manipulation. His innovative work has led to the development of a unique patent that addresses the behavior of ballistic electrons in doped semiconductor elements.

Latest Patents

Uri Sivan holds a patent titled "Electron wave deflection in modulation doped and other doped." This invention relates to semiconductor devices that incorporate doped semiconductor elements or modulation doped devices. The patent describes how ballistic electrons in these elements or in a two-dimensional electron gas (2-DEG) can be deflected by shaped potential barriers. A shaped potential barrier is created by depositing a shaped electrode on the surface of the device and applying a potential to it. The electrode can take the form of a biconcave lens, which induces a corresponding potential barrier in the underlying device. As electrons transit this potential barrier, their phases differ across the width of the electrode, resulting in a focused beam of electrons. By adjusting the applied potential, the focal point of the exiting electrons can be moved parallel to the axis of the lens-like electrode. Other configurations, such as a biconvex shape, can cause incident electrons to diverge from their original paths. Additionally, a triangular electrode can reflect, transmit, or deflect incident electron waves depending on the applied potentials.

Career Highlights

Uri Sivan's career is marked by his innovative approach to semiconductor technology. His work has not only advanced the understanding of electron behavior in doped materials but has also opened new avenues for the development of advanced electronic devices. His patent is a testament to his expertise and creativity in the field.

Collaborations

Uri Sivan has collaborated with notable colleagues, including Mordehai Heiblum and Corwin Paul Umbach. These collaborations have likely contributed to the depth and breadth of his research and innovations in semiconductor technology.

Conclusion

Uri Sivan's contributions to semiconductor technology through his patent on electron wave deflection demonstrate his significant role as an inventor. His innovative approaches continue to influence the field and pave the way for future advancements in electronic devices.

Profile summary based on public USPTO records.
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