The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1992
Filed:
May. 24, 1991
Mordehai Heiblum, Yorktown Heights, NY (US);
Uri Sivan, Yorktown Heights, NY (US);
Corwin P Umbach, Katonah, NY (US);
Other;
Abstract
The present invention relates to semiconductor devices which incorporate doped semiconductor elements or modulation doped devices wherein ballistic electrons in these elements or in a two-dimensional electron gas (2-DEG) are deflected by shaped potential barriers. A shaped potential barrier is formed by depositing a shaped electrode on the surface of the device and applying a potential to it. The electrode may take the shape of a biconcave lens which induces a potential barrier of that shape in the underlying device. Upon transiting the potential barrier induced by the shaped electrode, the phases of the exiting electrons are different across the width of the electrode and the beam of electrons is focused. By changing the applied potential, the focal point of the exiting electrons may be moved in a direction parallel to the axis of the lens-like electrode. Other electrode configurations such as a biconvex shape will cause incident electrons to diverge from their original paths. In another embodiment, a triangular electrode, depending on the potentials applied to it, reflects, transmits or deflects incident electron waves.