Suwon-si, South Korea

Unghwan Pi

This inventor holds 1 USPTO granted patent. Top assignees: Max-Planck-Gesellschaft Zur Förderung Der Wissenschaften E. V. , Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Unghwan Pi. Retrieved from https://idiyas.com/inventor/unghwan-pi-s8mgj3zn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Unghwan Pi in Magnetic Memory Devices

Introduction

Unghwan Pi is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of magnetic memory devices, showcasing his expertise through innovative patents. His work has implications for the advancement of memory technology, which is crucial in various electronic applications.

Latest Patents

Unghwan Pi holds a patent titled "Methods of operating magnetic memory devices." This patent describes a method that involves several steps to operate a magnetic memory device effectively. The process includes applying a first current to a free layer of a magnetic tunnel junction structure, which consists of a magnetic translation unit (MTU) and a tunnel barrier layer. The method further details the application of magnetic fields and currents to manipulate the magnetization direction within the device, ultimately enhancing its functionality.

Career Highlights

Throughout his career, Unghwan Pi has worked with prominent organizations, including Samsung Electronics Ltd. and the Max Planck Society for the Advancement of Science. His experience in these leading companies has allowed him to refine his skills and contribute to groundbreaking research in the field of magnetic memory technology.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Unghwan Pi's innovative work in magnetic memory devices exemplifies the importance of research and development in advancing technology. His contributions are paving the way for future advancements in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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