The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jul. 16, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Unghwan Pi, Suwon-si, KR;
Stuart Papworth Parkin, Munich, DE;
Andrea Migliorini, Munich, DE;
Jaechun Jeon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., Munich, DE;
Abstract
A method of operating a magnetic memory device includes: (i) applying a first current to a free layer of a magnetic tunnel junction structure, which includes a magnetic translation unit (MTU) extending between a first magnetic pad and a second magnetic pad, and a tunnel barrier layer and a pinned layer stacked on the MTU, so that a multi-domain is established within the MTU, (ii) applying a magnetic field to the free layer so that the magnetization direction of the MTU switches to become anti-parallel to the magnetization directions of the first magnetic pad and the second magnetic pad, (iii) applying a second current to the free layer so that a portion of the multi-domain penetrates into the first magnetic pad, and (iv) applying another magnetic field to the free layer so that the magnetization direction of the first magnetic pad switches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile