Yongin, South Korea

Ung-Kuk Heo

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Sdi Co., Inc.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ung-Kuk Heo. Retrieved from https://idiyas.com/inventor/ung-kuk-heo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 11.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Ung-Kuk Heo in Silicon-Based Materials

Introduction

Ung-Kuk Heo is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of rechargeable lithium batteries through his innovative work on silicon-based negative active materials. His research and inventions have the potential to enhance battery performance and efficiency.

Latest Patents

Ung-Kuk Heo holds a patent for a silicon-based negative active material, which includes a core made of silicon oxide represented by SiO(0

Career Highlights

He is currently employed at Samsung SDI Co., Inc., where he continues to develop advanced materials for energy storage solutions. His work is pivotal in the ongoing quest for more efficient and sustainable battery technologies.

Collaborations

Ung-Kuk Heo has collaborated with notable colleagues, including Sang-Eun Park and Young-Ugk Kim. Their combined expertise contributes to the innovative projects at Samsung SDI Co., Inc.

Conclusion

Ung-Kuk Heo's contributions to the field of silicon-based materials for rechargeable lithium batteries highlight his role as a key innovator in energy storage technology. His work not only advances scientific understanding but also paves the way for future developments in battery efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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