The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Mar. 13, 2013
Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Sang-Eun Park, Yongin-si, KR;
Young-Ugk Kim, Yongin-si, KR;
Young-Hwan Kim, Yongin-si, KR;
Sang-Min Lee, Yongin-si, KR;
Duck-Chul Hwang, Yongin-si, KR;
Young-Jun Lee, Yongin-si, KR;
Young-Min Kim, Yongin-si, KR;
Tae-Geun Kim, Yongin-si, KR;
Seung-Ho Na, Yongin-si, KR;
Ung-Kuk Heo, Yongin-si, KR;
Deuk-Hwa Lee, Yongin-si, KR;
Samsung SDI Co., Ltd., Yongin-si, KR;
Abstract
A silicon-based negative active material that includes a core including silicon oxide represented by SiO(0<x<2); and a coating layer including metal oxide, and the metal of the metal oxide includes aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and/or molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases to the center of the core, and an atom % concentration of an oxygen (O) element increases to the center, and a depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core.