Castiglione Di Sicilia, Italy

Umberto Stagnitti

This inventor holds 2 USPTO granted patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Umberto Stagnitti. Retrieved from https://idiyas.com/inventor/umberto-stagnitti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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2 patents (USPTO):Explore Patents

Title: Umberto Stagnitti: Innovator in Semiconductor Technology

Introduction

Umberto Stagnitti is a notable inventor based in Castiglione Di Sicilia, Italy. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to electronic device fabrication.

Latest Patents

Stagnitti's latest patents include a method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites. This method involves implanting ions of a noble gas followed by thermal treatment to create getter microcavities in the semiconductor. His second patent focuses on a method for manufacturing electronic devices in semiconductor substrates, which also utilizes noble gas ion implantation to form gettering microvoids.

Career Highlights

Umberto Stagnitti is currently employed at STMicroelectronics S.r.l., where he applies his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes of electronic devices, enhancing their efficiency and performance.

Collaborations

Stagnitti has collaborated with notable colleagues such as Mario Giuseppe Saggio and Vito Raineri, further enriching his professional experience and contributions to the field.

Conclusion

Umberto Stagnitti's innovative work in semiconductor technology and his patents reflect his commitment to advancing electronic device fabrication. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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