The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Apr. 17, 2000
Davide Caruso, Tremestieri Etneo, IT;
Vito Raineri, Mascalucia, IT;
Mario Saggio, Catania, IT;
Umberto Stagnitti, Castiglione Di Sicilia, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front and back surfaces of a semiconductor material wafer. The method comprises at least a step of implanting ions of a noble gas, followed by a thermal treatment directed to form gettering microvoids in the semiconductor by evaporation of the gas. The ion implanting step is carried out through the back surface of the semiconductor wafer prior to starting the manufacturing process for the electronic devices, and also can be before the step of cleaning the front surface of the wafer.