Ulrich Kroemer

Title: Ulrich Kroemer: Innovator in Tungsten Nitride Atomic Layer Deposition Processes

Introduction

Ulrich Kroemer is a notable inventor based in Jena, Germany. He has made significant contributions to the field of material science, particularly in the development of tungsten nitride atomic layer deposition processes. With a total of 4 patents to his name, Kroemer's work has implications for various applications in semiconductor technology.

Latest Patents

Kroemer's latest patents focus on methods for forming tungsten barrier materials on substrates. One embodiment involves depositing a tungsten layer during a vapor deposition process. The substrate is then exposed sequentially to a tungsten precursor and a nitrogen precursor, resulting in the formation of a tungsten nitride layer on the tungsten layer. Some examples indicate that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas, such as diborane or silane, during an atomic layer deposition process. The tungsten layer typically has a thickness of about 50 Å or less, while the tungsten nitride layer may exhibit an electrical resistivity of approximately 380 μΩ-cm or less. Additionally, other examples suggest that a tungsten bulk layer can be deposited on the tungsten nitride layer through a chemical vapor deposition process.

Career Highlights

Ulrich Kroemer is currently associated with Applied Materials, Inc., a leading company in the field of materials engineering. His innovative work has positioned him as a key figure in advancing deposition technologies that are critical for modern electronics.

Collaborations

Kroemer has collaborated with notable colleagues, including Shulin Wang and Lee Luo. Their combined expertise has contributed to the successful development of advanced materials and processes in the semiconductor industry.

Conclusion

Ulrich Kroemer's contributions to tungsten nitride atomic layer deposition processes highlight his role as an influential inventor in material science. His patents and collaborations continue to shape the future of semiconductor technology.