The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Aug. 20, 2008
Shulin Wang, Campbell, CA (US);
Ulrich Kroemer, Jena, DE;
Lee Luo, Fremont, CA (US);
Aihua Chen, San Jose, CA (US);
Ming LI, Cupertino, CA (US);
Shulin Wang, Campbell, CA (US);
Ulrich Kroemer, Jena, DE;
Lee Luo, Fremont, CA (US);
Aihua Chen, San Jose, CA (US);
Ming Li, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.