Dresden, Germany

Ulf Lederer

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Infineon Technologies Richmond, LP. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ulf Lederer. Retrieved from https://idiyas.com/inventor/ulf-lederer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Ulf Lederer: Innovator in Semiconductor Technology

Introduction

Ulf Lederer is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of failure analysis and mapping.

Latest Patents

Ulf Lederer holds a patent for "Advanced bit fail map compression with fail signature analysis." This innovative method provides a compressed bit fail map by testing semiconductor devices to determine failures. The process involves transferring failure information to display a compressed bit map, designating areas for corresponding failure locations. Additionally, failure classification is achieved by defining shapes and dimensions of fail areas, which indicate the type of failure.

Career Highlights

Ulf Lederer is associated with Infineon Technologies Richmond, LP, where he applies his expertise in semiconductor technology. His work has been instrumental in enhancing the efficiency of failure analysis in semiconductor devices.

Collaborations

Ulf has collaborated with notable colleagues, including Joerg Vollrath and Peter Oswald, contributing to advancements in their field.

Conclusion

Ulf Lederer's innovative work in semiconductor technology, particularly through his patented methods, showcases his commitment to improving failure analysis processes. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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