Location History:
- Anyang-si, KR (2016)
- Anytang-si, KR (2016)
- Gyeonggi-Do, KR (2016)
Company Filing History:
Years Active: 2016
Title: Uck-Soo Kim: Innovator in Fuel Cell Technology
Introduction
Uck-Soo Kim is a prominent inventor based in Anyang-si, South Korea. He has made significant contributions to the field of fuel cell technology, holding a total of six patents. His innovative methods for diagnosing faults in fuel cell stacks have the potential to enhance the reliability and efficiency of fuel cell systems.
Latest Patents
One of Uck-Soo Kim's latest patents is a method for diagnosing faults in fuel cell stacks. This method involves applying a summed current obtained by summing first and second frequencies to the fuel cell stack. It diagnoses whether a fault has occurred by analyzing the output voltages at higher frequencies. Additionally, it reconfirms the presence of faults using the first and second frequencies in the output voltage. Another patent focuses on a similar diagnostic method, which applies a summed current from different frequency regions to the fuel cell stack. This method filters the output voltages through various frequency filters to extract diagnosis data, allowing for rapid fault diagnosis and improved analysis capabilities.
Career Highlights
Uck-Soo Kim has worked with notable companies in the automotive and technology sectors. He has been associated with Hyundai Autron Company Ltd. and Hyundai Motor Company, where he has contributed to advancements in fuel cell technology and automotive innovations.
Collaborations
Uck-Soo Kim has collaborated with talented individuals in his field, including Hyun-Seok Park and Kwi Seong Jeong. Their combined expertise has likely contributed to the development of innovative solutions in fuel cell diagnostics.
Conclusion
Uck-Soo Kim's work in fuel cell technology exemplifies the importance of innovation in addressing modern energy challenges. His patents and career achievements highlight his role as a key contributor to advancements in this critical field.