Tzy-Tzan Fu

Title: Tzy-Tzan Fu: Innovator in Semiconductor Technology

Introduction

Tzy-Tzan Fu, an inventive engineer based in Hsinchu, Taiwan, has made significant contributions to semiconductor technology, holding three patents that enhance the fabrication processes of semiconductor devices. His work primarily focuses on methods that reduce hydrogen diffusion and improve the manufacturing of transistors, which are critical for modern electronics.

Latest Patents

Tzy-Tzan Fu's recent innovations include the following patents:

1. **Limiting Hydrogen Ion Diffusion Using Multiple Layers of SiO2 and Si3N4**:

This patent describes a method for fabricating a semiconductor device that includes a gate structure comprised of silicon oxide (SiO) and silicon nitride (Si3N4). The invention aims to minimize hydrogen diffusion during low-temperature chemical vapor deposition processes. The process involves depositing a silicon dioxide layer on a wafer once the gate structure has been fabricated. A barrier layer then forms on the silicon dioxide, followed by a silicon nitride layer deposited via low-temperature chemical vapor deposition. This barrier effectively reduces, or entirely prevents, the diffusion of hydrogen into the gate oxide and channel layers.

2. **Method of Making a Transistor**:

This patent presents a process for the fabrication of a transistor, specifically focusing on the formation of spacers. A gate dielectric layer is first applied to a semiconductor substrate, followed by the establishment of a gate over this dielectric. The method includes depositing a first silicon nitride layer of a specific thickness and deposition rate, afterward followed by a second silicon nitride layer with a greater thickness and deposition rate. This innovative approach ensures that the first silicon nitride layer has a lower hydrogen concentration, which is beneficial for transistor performance. Spacers are then created adjacent to the gate's side surfaces while leaving the upper surfaces exposed.

Career Highlights

Throughout his career, Tzy-Tzan Fu has worked with various reputable companies, including Applied Materials, Inc. His experience at such a prestigious organization has likely fueled his growth and innovation in the field of semiconductor technology.

Collaborations

Tzy-Tzan has collaborated with notable colleagues such as Kuan-Ting Lin and Hung-Chuan Chen. These partnerships underscore the importance of teamwork in achieving advancements in technology and innovation.

Conclusion

Tzy-Tzan Fu stands out as a significant contributor to semiconductor innovation, with patented methods that address critical challenges in the industry. His dedication to improving semiconductor fabrication processes not only advances technology but also influences the future of electronic devices.