The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Aug. 21, 2001
Applicant:
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
In a method of forming silicon nitride on a substrate, a substrate is provided in a reaction chamber and a nitrogen-containing gas is introduced into the chamber so that a portion of the nitrogen-containing gas is chemically adsorbed on the substrate surface. Thereafter, the reaction chamber is pumped down to remove the nitrogen-containing gas. A silicon-containing gas is introduced into the reaction chamber to react with the adsorbed nitrogen-containing gas to form a silicon nitride layer on the substrate. Thereafter, the silicon-containing gas may be removed and the cycle repeated to deposit additional silicon nitride layers on the substrate.