The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Dec. 21, 2001
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of fabricating a semiconductor device having a gate structure comprising SiO and Si N that exhibits reduced hydrogen diffusion during low temperature chemical vapor deposition of silicon nitride. In the method, a silicon dioxide (SiO ) layer is deposited on a wafer after a gate structure is fabricated. A barrier layer is formed on the silicon dioxide (SiO ) layer. Then a silicon nitride layer is formed over it by low temperature chemical vapor deposition. The barrier layer reduces, and may even altogether prevent, diffusion of the hydrogen absorbed by the silicon nitride layer into the gate oxide and channel during the low temperature chemical vapor deposition of silicon nitride.